FDN357N
Manufacturer:
On Semiconductor
Mfr.Part #:
FDN357N
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 500 mW 30 V Continuous Drain Current (ID):1.9 A 5.9 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 2.92 mm |
| Width | 3.05 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 60 MΩ |
| Height | 940 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Terminals | 3 |
| Number of Elements | 1 |
| Current Rating | 1.9 A |
| Max Power Dissipation | 500 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | 1.6 V |
| Number of Channels | 1 |
| Input capacitance | 235 pF |
| Continuous Drain Current (ID) | 1.9 A |
| Rds On Max | 60 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 12 ns |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Rise Time | 12 ns |
| Dual Supply Voltage | 30 V |
| Min Breakdown Voltage | 30 V |
| Gate Charge | 5.9 nC |
| Drain to Source Resistance | 81 mΩ |
| Nominal Vgs | 1.6 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 108
Distributors
pcbx
pcbxUnit Price$0.20899
Ext.Price$0.20899
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.20899 | $0.20899 |
| 10 | $0.19098 | $1.90980 |
| 50 | $0.17453 | $8.72650 |
| 100 | $0.15207 | $15.20700 |
| 500 | $0.13250 | $66.25000 |
| 1000 | $0.12897 | $128.97000 |
| 3000 | $0.12554 | $376.62000 |
| 5000 | $0.12054 | $602.70000 |